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Electroluminescence improvement of the lighting-emitting diodes on the slanted {10-11} surfaces of laterally-overgrown semipolar GaN on m-plane sapphire substrate
  • AuthorS. B. Choi, Y. S. Kwak, D. S. Lee, J. F. Kaeding, S. Nakamura, S. P. DenBaars, J. S. Speck
  • Year2010
  • SourceInternational Workshop on Nitride Semiconductors (IWNS2010), 219, (2010)

Optimization of the miscut angle on the m-plane for the growth of (11-22) semipolar GaN films using metal organic vapor phase epitaxy
  • AuthorS. Y. Bae, D. S. Lee, J. F. Kaeding, S. Nakamura, Steven P. DenBaars, James S. Speck
  • Year2009
  • SourceThe 36th International Symposium on Compound Semiconductors (ISCS2009), 233-234, (2009)

Optical and Material Properties of the Light-Emitting Diodes on Laterally-Overgrown(1 1 -2 2) Semipolar GaN on m-plane Sapphire
  • AuthorY. S. Kwak, S. B. Choi, D. S. Lee, J. F. Kaeding, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Year2009
  • SourceThe 8th International Conference on Nitride Semiconductors (ICNS2009),1241, (2009)

Electroluminescent emission properties of the (11-22) semipolar GaN on miscut m-plane sapphire substrates
  • AuthorS. Y. Bae, J. P. Shim, D. S. Lee, J. F. Kaeding, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Year2009
  • SourceThe 8th International Conference on Nitride Semiconductors (ICNS2009),1287-1288, (2009)
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