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Electroluminescence improvement of the lighting-emitting diodes on the slanted {10-11} surfaces of laterally-overgrown semipolar GaN on m-plane sapphire substrate
Author
S. B. Choi, Y. S. Kwak, D. S. Lee, J. F. Kaeding, S. Nakamura, S. P. DenBaars, J. S. Speck
Year
2010
Source
International Workshop on Nitride Semiconductors (IWNS2010), 219, (2010)
Optimization of the miscut angle on the m-plane for the growth of (11-22) semipolar GaN films using metal organic vapor phase epitaxy
Author
S. Y. Bae, D. S. Lee, J. F. Kaeding, S. Nakamura, Steven P. DenBaars, James S. Speck
Year
2009
Source
The 36th International Symposium on Compound Semiconductors (ISCS2009), 233-234, (2009)
Optical and Material Properties of the Light-Emitting Diodes on Laterally-Overgrown(1 1 -2 2) Semipolar GaN on m-plane Sapphire
Author
Y. S. Kwak, S. B. Choi, D. S. Lee, J. F. Kaeding, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Year
2009
Source
The 8th International Conference on Nitride Semiconductors (ICNS2009),1241, (2009)
Electroluminescent emission properties of the (11-22) semipolar GaN on miscut m-plane sapphire substrates
Author
S. Y. Bae, J. P. Shim, D. S. Lee, J. F. Kaeding, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Year
2009
Source
The 8th International Conference on Nitride Semiconductors (ICNS2009),1287-1288, (2009)
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