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Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition
  • AuthorJung-Wook Min, Hyeong-Yong Hwang, Eun-Kyu Kang, Kwangwook Park, Ci-Hyun Kim, Dong-Seon Lee, Young-Dahl Jho, Si-Young Bae, and Yong-Tak Lee
  • Year2016
  • SourceJapanese Journal of Applied Physics

Structural and optical study of core?shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum
  • AuthorSi-Young Bae, Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manato Deki, Yoshio Honda, and Hiroshi Amano
  • Year2016
  • SourceJapanese Journal of Applied Physics

Color tunable monolithic InGaN/GaN LED having a multi-junction structure
  • AuthorDuk-Jo Kong, Chang-Mo Kang, Jun-Yeob Lee, James Kim, and Dong-Seon Lee
  • Year2016
  • SourceOptics Express

Ag nanoparticles-embedded surface plasmonic InGaN-based solar cells via scattering and localized field enhancement
  • AuthorJae-Phil Shim, Sang-Bae Choi, Duk-Jo Kong, Dong-Ju Seo, Hyung-Jun Kim, and Dong-Seon Lee
  • Year2016
  • SourceOptics Express

Improvement of light extraction for a target wavelength in InGaN/GaN LEDs with an indium tin oxide dual layer by oblique angle deposition
  • AuthorDong-Ju Seo, and Dong-Seon Lee
  • Year2016
  • SourceApplied Physics Express

Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
  • AuthorJung-Hong Min, Tae Hoon Seo, Sang-Bae Choi, Kiyoung Kim, Jun-Yeob Lee, Mun-Do Park, Myung Jong Kim, Eun-Kyung Suh, Jong-Ryeol Kim, Dong-Seon Lee
  • Year2016
  • SourceCurrent Applied Physics

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method
  • AuthorIn Young Kim, Ju Yeon Lee, Uma V. Ghorpade, M.P. Suryawanshi, Dong Seon Lee, and Jin Hyeok Kim
  • Year2016
  • SourceJournal of Alloys and Compounds

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
  • AuthorS.-Y. Bae, K. Lekhal, H.-J. Lee, T. Mitsunari, J.-W. Min, D.-S. Lee, M. Kushimoto, Y. Honda, H. Amano
  • Year2016
  • SourceJournal of Crystal Growth

Fabrication of Cu2SnS3 thin film solar cells using Cu/Sn layered metallic precursors prepared by a sputtering process
  • AuthorJu Yeon Lee, Jihun Kim, Mahesh P. Surywanshi, Uma V. Ghorpade, Dong Seon Lee, and Jin-Hyeok Kim
  • Year2016
  • SourceSolar Energy

Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer
  • AuthorJae-Phil Shim, Won-Seok Seong, Jung-Hong Min, Duk-Jo Kong, Dong-Ju Seo, Hyung-Jun Kim, and Dong-Seon Lee
  • Year2016
  • SourceNanotechnology
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